CSD75205W1015 Datasheet, PDF (1/11 Pages) Texas Instruments – P-Channel NexFET Power MOSFET

CSD75205W1015
www.ti.com.............................................................................................................................................................................................. SLPS222 – OCTOBER 2009
P-Channel NexFET™ Power MOSFET
FEATURES
1
• Dual P-Ch MOSFETs
• Common Source Configuration
• Small Footprint 1mm × 1.5mm
• Gate-Source Voltage Clamp
• Gate ESD Protection –3kV
• Pb Free
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Battery Management
• Load Switch
• Battery Protection
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile. Low on resistance coupled with the
small footprint and low profile make the device ideal
for battery operated space constrained applications.
Top View
P0099-01
Table 1. PRODUCT SUMMARY
V_DS
Drain to Source Voltage
–20
V
Q_g
Gate Charge Total (-4.5V)
1.6
nC
Q_gd
Gate Charge Gate to Drain
0.4
nC
V_GS = –1.8V 145 mΩ
R_DS(on)
Drain to Source On Resistance V_GS = –2.5V
115 mΩ
V_GS = –4.5V
95 mΩ
V_GS = -1.8V
245 mΩ
R_D1D2(on) Drain to Drain On Resistance V_GS = -2.5V
180 mΩ
V_GS = -4.5V
140 mΩ
V_GS(th)
Threshold Voltage
–0.65
V
ORDERING INFORMATION
Device
CSD75205W1015
Package
1-mm × 1.5-mm
Wafer Level Package
Media
7-Inch
Reel
Qty
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
Continuous Drain to Source Current,
I_DS
T_C = 25°C⁽¹⁾
Pulsed Drain to Source Current,
T_C = 25°C⁽²⁾
Continuous Source Pin Current
I_S
Pulsed Source Pin Current⁽²⁾
Continuous Gate Clamp Current
I_G
Pulsed Gate Clamp Current⁽²⁾
P_D
T_J,
T_STG
Power Dissipation⁽¹⁾
Operating Junction and Storage
Temperature Range
VALUE
–20
-6
–1.2
-9.6
-2.3
-30
-0.5
-7
0.75
–55 to 150
(1) Per device, both sides in conduction
(2) Pulse duration 10μs, duty cycle ≤2%
UNIT
V
V
A
A
A
A
A
A
W
°C
500
450
400
350
300
250
200
150
100
50
0
0
R_DS(on) vs V_GS
I_D = -1A
T_J = 25°C
T_J = 125°C
1
2
3
4
5
-V_GS − Gate to Source Voltage − V
6
G006
500
450
400
350
300
250
200
150
100
50
0
0
R_D1D2(on) vs V_GS
I_D1D2 = -1A
T_J = 25°C
T_J = 125°C
1
2
3
4
5
-V_GS − Gate to Source Voltage − V
6
G013
1
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Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated