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CSD75204W15_10 Datasheet, PDF (1/9 Pages) Texas Instruments – Dual P-Channel NexFET™ Power MOSFET | |||
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CSD75204W15
www.ti.com
SLPS221A â OCTOBER 2009 â REVISED OCTOBER 2010
Dual P-Channel NexFET⢠Power MOSFET
Check for Samples: CSD75204W15
FEATURES
1
⢠Dual P-Ch MOSFETs
⢠Common Source Configuration
⢠Small Footprint 1.5-mm à 1.5-mm
⢠Gate-Source Voltage Clamp
⢠Gate ESD Protection â3kV
⢠Pb Free
⢠RoHS Compliant
⢠Halogen Free
APPLICATIONS
⢠Battery Management
⢠Battery Protection
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile. Low on resistance coupled with the
small footprint and low profile make the device ideal
for battery operated space constrained applications.
Top View
G1
D1
D1
SS
D2
D1
G2
D2
D2
P0109-01
PRODUCT SUMMARY
VD1D2
Qg
Qgd
Drain to Drain Voltage
Gate Charge Total (-4.5V)
Gate Charge Gate to Drain
RD1D2(on) Drain to Drain On Resistance
VGS(th) Threshold Voltage
â20
V
2.8
nC
0.6
nC
VGS = â1.8V 140 mâ¦
VGS = â2.5V 105 mâ¦
VGS = â4.5V
80 mâ¦
â0.7
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD75204W15
1.5-mm à 1.5-mm
Wafer Level Package
7-Inch
Reel
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VD1D2 Drain to Drain Voltage
VGS Gate to Source Voltage
ID1D2
Continuous Drain to Drain Current,
TC = 25°C(1)
Pulsed Drain to Drain Current,
TC = 25°C(2)
Continuous Source Pin Current
IS
Pulsed Source Pin Current(2)
VALUE
â20
-6
â3
-28
-1.2
-15
IG
PD
TJ,
TSTG
Continuous Gate Clamp Current
Pulsed Gate Clamp Current(2)
Power Dissipation(1)
Operating Junction and Storage
Temperature Range
-0.5
-7
0.7
â55 to 150
(1) Per device, both sides in conduction
(2) Pulse duration 10ms, duty cycle â¤2%
UNIT
V
V
A
A
A
A
A
A
W
°C
300
250
200
150
100
50
0
0
RD1D2(on) vs VGS
ID1D2 = â1A
TJ = 125°C
TJ = 25°C
1
2
3
4
5
âVGS â Gate to Source Voltage â V
6
G006
Gate Charge (Per MOSFET)
6
ID1D2 = â1A
5 VD1D2 = â10V
4
3
2
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Qg â Gate Charge â nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009â2010, Texas Instruments Incorporated
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