CSD75204W15 Datasheet, PDF (1/11 Pages) Texas Instruments – Dual P-Channel NexFET Power MOSFET

CSD75204W15
www.ti.com.............................................................................................................................................................................................. SLPS221 – OCTOBER 2009
Dual P-Channel NexFET™ Power MOSFET
Check for Samples: CSD75204W15
FEATURES
1
• Dual P-Ch MOSFETs
• Common Source Configuration
• Small Footprint 1.5-mm × 1.5-mm
• Gate-Source Voltage Clamp
• Gate ESD Protection –3kV
• Pb Free
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Battery Management
• Battery Protection
Table 1. PRODUCT SUMMARY
V_D1D2
Q_g
Q_gd
Drain to Drain Voltage
Gate Charge Total (-4.5V)
Gate Charge Gate to Drain
R_D1D2(on) Drain to Drain On Resistance
V_GS(th) Threshold Voltage
–20
V
2.8
nC
0.6
nC
V_GS = –1.8V 140 mΩ
V_GS = –2.5V 105 mΩ
V_GS = –4.5V
80 mΩ
–0.7
V
ORDERING INFORMATION
Device
CSD75204W15
Package
1.5-mm × 1.5-mm
Wafer Level Package
Media
7-Inch
Reel
Qty
3000
Ship
Tape and
Reel
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile. Low on resistance coupled with the
small footprint and low profile make the device ideal
for battery operated space constrained applications.
Top View
G1
D1
D1
SS
D2
D1
G2
D2
D2
P0109-01
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_D1D2 Drain to Drain Voltage
V_GS Gate to Source Voltage
I_D1D2
Continuous Drain to Drain Current,
T_C = 25°C⁽¹⁾
Pulsed Drain to Drain Current,
T_C = 25°C⁽²⁾
Continuous Source Pin Current
I_S
Pulsed Source Pin Current⁽²⁾
I_G
P_D
T_J,
T_STG
Continuous Gate Clamp Current
Pulsed Gate Clamp Current⁽²⁾
Power Dissipation⁽¹⁾
Operating Junction and Storage
Temperature Range
VALUE
–20
-6
–3
UNIT
V
V
A
-28
A
-1.2
A
-15
A
-0.5
A
-7
A
0.7
W
–55 to 150 °C
(1) Per device, both sides in conduction
(2) Pulse duration 10μs, duty cycle ≤2%
300
250
200
150
100
50
0
0
R_D1D2(on) vs V_GS
I_D1D2 = −1A
T_J = 125°C
T_J = 25°C
1
2
3
4
5
−V_GS − Gate to Source Voltage − V
6
G006
Gate Charge (Per MOSFET)
6
I_D1D2 = −1A
5 ^VD1D2 ^{= −10V}
4
3
2
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Qg − Gate Charge − nC
G003
1
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Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated