CSD25302Q2 Datasheet, PDF (1/9 Pages) Texas Instruments – P-Channel NexFET™ Power MOSFET

CSD25302Q2
www.ti.com
SLPS234A – NOVEMBER 2009 – REVISED OCTOBER 2010
P-Channel NexFET™ Power MOSFET
FEATURES
1
• Ultralow Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
APPLICATIONS
• Battery Management
• Load Management
• Battery Protection
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile. Low on resistance coupled with the
extremely small footprint and low profile make the
device ideal for battery operated space constrained
applications.
Top View
S1
S
S2
6S
5S
PRODUCT SUMMARY
V_DS
Drain to Source Voltage
–20
V
Q_g
Gate Charge Total (–4.5V)
2.6
nC
Q_gd
Gate Charge Gate to Drain
0.5
nC
V_GS = –1.8V
71 mΩ
R_DS(on) Drain to Source On Resistance V_GS = –2.5V
56 mΩ
V_GS = –4.5V
39 mΩ
V_GS(th) Threshold Voltage
–0.65
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD25302Q2
SON 2-mm × 2-mm
Plastic Package
13-Inch
Reel
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS
Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM
Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation
T_J,
T_STG
Operating Junction and Storage
Temperature Range
VALUE
–20
±8
–5
–5
–20
2.4
–55 to 150
(1) Package Limited
(2) Pulse duration 10 µs, duty cycle ≤2%
UNIT
V
V
A
A
A
W
°C
G3
D
4D
P0112-01
R_DS(on) vs V_GS
150
I_D = −3A
125
GATE CHARGE
6
I_D = −3A
5 ^VDS ^{= −10V}
100
4
75
T_C = 125°C
3
50
2
25
0
1
T_C = 25°C
2
3
4
5
6
7
−V_GS − Gate to Source Voltage − V
8
G006
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q_g − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated