CSD25213W10 Datasheet, PDF (1/12 Pages) Texas Instruments – P-Channel NexFET Power MOSFET

CSD25213W10
www.ti.com
P-Channel NexFET™ Power MOSFET
Check for Samples: CSD25213W10
SLPS443 – JUNE 2013
FEATURES
1
• Ultra Low Qg and Qgd
• Small Footprint 1mm × 1mm
• Low Profile 0.62mm Height
• Pb Free
• Gate-Source Voltage Clamp
• Gate ESD Protection
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Battery Management
• Load Switch
• Battery Protection
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile.
Top View
GS
R_C
R_G
DS
PRODUCT SUMMARY
V_DS
Drain to Source Voltage
–20
V
Q_g
Gate Charge Total (4.5V)
2.2
nC
Q_gd
Gate Charge Gate to Drain
0.14
nC
R_DS(on)
Drain to Source On
Resistance
V_GS = –2.5V
54
mΩ
V_GS = –4.5V
39
mΩ
V_GS(th) Threshold Voltage
–0.85
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD25213W10
1 × 1 Wafer Level
Package
7-inch reel
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
I_D
Continuous Drain Current,
T_A = 25°C⁽¹⁾
I_DM
Pulsed Drain Current, T_A = 25°C⁽²⁾
I_G
Continuous Gate Clamp Current⁽³⁾
P_D
Power Dissipation⁽¹⁾
T_J, T_STG
Operating Junction and Storage
Temperature Range
VALUE
–20
–6.0
-1.6
-16
-5
1
–55 to 150
UNIT
V
V
A
A
mA
W
°C
(1) R_θJA = 75°C/W on 1in² Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300μs, duty cycle ≤2%
(3) Limited by gate resistance.
100
90
80
70
60
50
40
30
20
0
R_DS(on) vs V_GS
T_C = 25°C Id = −1A
T_C = 125ºC Id = −1A
1
2
3
4
5
6
− V_GS - Gate-to- Source Voltage (V)
G001
4.5
I_D = −1A
4 _{VDS =−10V}
3.5
GATE CHARGE
3
2.5
2
1.5
1
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Q_g - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated