CSD25211W1015 Datasheet, PDF (1/10 Pages) Texas Instruments – P-Channel NexFET™ Power MOSFET

CSD25211W1015
www.ti.com
P-Channel NexFET™ Power MOSFET
Check for Samples: CSD25211W1015
SLPS296 – FEBRUARY 2012
FEATURES
1
• Ultra Low On Resistance
• Ultra Low Qg and Qgd
• Small Footprint 1.0mm x 1.5mm
• Low Profile 0.62mm Height
• Pb Free
• Gate-Source Voltage Clamp
• Gate ESD Protection - 3KV
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Battery Management
• Load Switch
• Battery Protection
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile.
Top View
PRODUCT SUMMARY
T_A = 25°C unless otherwise stated
V_DS
Drain to Source Voltage
Q_g
Gate Charge Total (-4.5V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain to Source On Resistance
V_GS(th) Voltage Threshold
TYPICAL VALUE
-20
3.4
0.2
V_GS = -2.5V
36
V_GS = -4.5V
27
-0.8
UNIT
V
nC
nC
mΩ
mΩ
V
ORDERING INFORMATION
Device
Package
Media
Qty
CSD25211W1015
1 × 1.5 Wafer
Level Package
7-inch reel 3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_A = 25°C⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
I_G
Continuous Drain Current, T_A = 25°C
Pulsed Drain Current
P_D
Power Dissipation⁽¹⁾
T_STG Storage Temperature Range
T_J
Operating Junction Temperature Range
VALUE
-20
-6
-3.2
-9.5
-0.5
-7
1
UNIT
V
V
A
A
A
A
W
–55 to 150 °C
(1) Typical R_θJA = 119°C/W on 1 inch² of 2 oz. Cu on 0.06" thick
FR4 PCB.
(2) Pulse width ≤10µs, duty cycle ≤2%
100
90
80
70
60
50
40
30
20
10
0
0
R_DS(ON) vs V_GS
I_D = 1.5A
T_C = 25°C
T_C = 125ºC
1
2
3
4
5
6
V_GS - Gate-to- Source Voltage - V
G001
6
5 ^{ID = 1.5A}
V_DD = 10V
4
Gate Charge
3
2
1
0
0
2
Q_g - Gate Charge - nC (nC)
4
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated