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CSD23203W_15 Datasheet, PDF (1/17 Pages) Texas Instruments – CSD23203W 8 V P-Channel NexFET Power MOSFET | |||
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CSD23203W
SLPS533 â DECEMBER 2014
CSD23203W 8 V P-Channel NexFET⢠Power MOSFET
1 Features
â¢1 Ultra-Low Qg and Qgd
⢠Low RDS(on)
⢠Small Footprint
⢠Low Profile 0.62 mm Height
⢠Pb Free
⢠RoHS Compliant
⢠Halogen Free
⢠CSP 1 à 1.5 mm Wafer Level Package
2 Applications
⢠Battery Management
⢠Load Switch
⢠Battery Protection
3 Description
This 16.2 mΩ, â8 V, P-Channel device is designed to
deliver the lowest on-resistance and gate charge in a
small 1.0 Ã 1.5 mm outline with excellent thermal
characteristics in an ultra-low profile.
Top View
D
S
G
D
S
S
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (â4.5 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on)
Drain-to-Source
On-Resistance
VGS(th) Voltage Threshold
TYPICAL VALUE
â8
4.9
0.6
VGS = â1.8 V
VGS = â2.5 V
VGS = â4.5 V
â0.8
35.0
22.0
16.2
UNIT
V
nC
nC
mâ¦
mâ¦
mâ¦
V
Device
CSD23203W
CSD23203WT
Ordering Information(1)
Qty
Media
Package
3000 7-Inch Reel
250 7-Inch Reel
1.0 mm à 1.5 mm
Wafer Level
Package
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID
Continuous Drain Current(1)
IDM Pulsed Drain Current(2)
PD Power Dissipation
TJ, Operating Junction and
Tstg Storage Temperature Range
VALUE
â8
â6
â3.0
â54
0.75
UNIT
V
V
A
A
W
â55 to 150 °C
(1) Device operating at a temperature of 105ºC
(2) Typ RθJA = 170°C/W, Pulse width â¤100 μs, duty cycle â¤1%
RDS(on) vs VGS
60
TC = 25°C, I D = -1.5 A
TC = 125°C, I D = -1.5 A
50
40
30
20
10
0
0
1
2
3
4
5
6
-VGS - Gate-To-Source Voltage (V)
D007
5
ID = -1.5 A
VDS = -4 V
4
Gate Charge
3
2
1
0
0
1
2
3
4
5
6
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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