CSD22202W15 Datasheet, PDF (1/12 Pages) Texas Instruments – P-Channel NexFET Power MOSFET

CSD22202W15
www.ti.com
SLPS431 – JUNE 2013
P-Channel NexFET™ Power MOSFET
Check for Samples: CSD22202W15
FEATURES
1
• Low Resistance
• Small Footprint 1.5-mm × 1.5-mm
• Pb Free
• Gate ESD Protection
• RoHS Compliant
• Halogen Free
• Gate-Source Voltage Clamp
APPLICATIONS
• Battery Management
• Battery Protection
• Load Switch Applications
DESCRIPTION
The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile. Low on resistance coupled with the
small footprint and low profile make the device ideal
for battery operated space constrained applications.
Top View and Circuit Configuration
G
S
S
Source
PRODUCT SUMMARY
V_DS
Drain to Drain Voltage
–8
V
Q_g
Gate Charge Total (–4.5V)
6.5
nC
Q_gd
Gate Charge Gate to Drain
1.0
nC
R_DS(on)
Drain to Source On Resistance
V_GS = –2.5V
V_GS = –4.5V
14.5 mΩ
10.2 mΩ
V_GS(th) Threshold Voltage
–0.8
V
.
ORDERING INFORMATION
Device
Package
Media Qty
CSD22202W15
1.5-mm × 1.5-mm
Wafer BGA Package
7-Inch
Reel
3000
Ship
Tape and
Reel
.
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
Continuous Drain Current⁽¹⁾ (Silicon
I_D
Limitted)
Pulsed Drain Current⁽²⁾
I_G
Continuous Gate Current⁽³⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
VALUE
–8
–6.0
UNIT
V
V
-10
A
-48
A
-0.5
A
1.5
W
–55 to 150 °C
(1) R_θJA = 75°C/W on 1in² Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300μs, duty cycle ≤2%
(3) Limited by gate resistance.
S
S
S
Gate
DDD
Drain
30
27
24
21
18
15
12
9
6
3
0
0
R_DS(on) vs V_GS
T_C = 25°C Id = −2A
T_C = 125ºC Id = −2A
1
2
3
4
5
6
− V_GS - Gate-to- Source Voltage (V)
G001
5
I_D = −2A
V_DS =−4V
4
GATE CHARGE
3
2
1
0
0
1
2
3
4
5
6
7
8
Q_g - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated