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CSD19534KCS_15 Datasheet, PDF (1/12 Pages) Texas Instruments – CSD19534KCS 100 V N-Channel NexFET Power MOSFET
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CSD19534KCS
SLPS530 – JANUARY 2015
CSD19534KCS 100 V N-Channel NexFET™ Power MOSFET
1 Features
•1 Ultra-Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• TO-220 Plastic Package
2 Applications
• Secondary Side Synchronous Rectifier
• Motor Control
3 Description
This 100 V, 13.7 mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power
conversion applications.
SPACE
Drain (Pin 2)
Gate
(Pin 1)
.
Source (Pin 3)
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
100
16.4
3.3
VGS = 6 V
VGS = 10 V
2.8
16.3
13.7
UNIT
V
nC
nC
mΩ
mΩ
V
Device
CSD19534KCS
Ordering Information(1)
Package
Media Qty
TO-220 Plastic Package Tube 50
Ship
Tube
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
100
±20
100
UNIT
V
V
Continuous Drain Current (Silicon limited),
ID
TC = 25°C
54
A
Continuous Drain Current (Silicon limited),
TC = 100°C
38
IDM Pulsed Drain Current (1)
138
A
PD Power Dissipation
118
W
TJ, Operating Junction and
Tstg Storage Temperature Range
–55 to 175 °C
EAS
Avalanche Energy, single pulse
ID = 33 A, L = 0.1 mH, RG = 25 Ω
54
mJ
(1) Max RθJC = 1.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%
RDS(on) vs VGS
45
TC = 25°C, I D = 30 A
40
TC = 125°C, I D = 30 A
35
30
25
20
15
10
5
0
2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage (V)
D007
10
ID = 30 A
VDS = 50 V
8
Gate Charge
6
4
2
0
0 2 4 6 8 10 12 14 16 18
Qg - Gate Charge (nC)
D004
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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