CSD18563Q5A Datasheet, PDF (1/10 Pages) Texas Instruments – 60-V N-Channel NexFET Power MOSFETs

CSD18563Q5A
www.ti.com
60-V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18563Q5A
SLPS444 – JULY 2013
FEATURES
1
•2 Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Logic Level
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• DC-DC Conversion
• Secondary Side Synchronous Rectifier
• Motor Control
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
PRODUCT SUMMARY
T_A = 25°C
V_DS
Drain to Source Voltage
Q_g
Gate Charge Total (10V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain to Source On Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
60
15.0
2.9
V_GS = 4.5V
8.6
V_GS = 10V
5.7
2.0
UNIT
V
nC
nC
mΩ
mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD18563Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
Continuous Drain Current (Package limited),
T_C = 25°C
I_D
Continuous Drain Current (Silicon limited),
T_C = 25°C
Continuous Drain Current, T_A = 25°C⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 54A, L = 0.1mH, R_G = 25Ω
VALUE
60
±20
100
91
15
96
3.2
–55 to 150
146
UNIT
V
V
A
A
W
°C
mJ
(1) Typical R_θJA = 40°C/W on a 1-inch², 2-oz. Cu pad on a 0.06-
inch thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
R_DS(on) vs V_GS
24
T_C = 25°C,I _D = 18A
21
T_C = 125°C,I _D = 18A
18
15
12
9
6
3
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to- Source Voltage (V)
G001
10
9
I_D = 18A
V_DS = 30V
8
GATE CHARGE
7
6
5
4
3
2
1
0
0
2
4
6
8 10 12 14 16
Q_g - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated