CSD17579Q5A_15 Datasheet, PDF (1/15 Pages) Texas Instruments – CSD17579Q5A 30 V N-Channel NexFET Power MOSFETs

Product
Folder
Sample &
Buy
Technical
Documents
Tools &
Software
Support &
Community
CSD17579Q5A
SLPS524 – MARCH 2015
CSD17579Q5A 30 V N-Channel NexFET™ Power MOSFETs
1 Features
•1 Low Q_g and Q_gd
• Low R_DS(on)
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5 mm × 6 mm Plastic Package
2 Applications
• Point-of-Load Synchronous Buck Converter for
Applications in Networking, Telecom, and
Computing Systems
• Optimized for Control FET Applications
Product Summary
T_A = 25°C
V_DS
Drain-to-Source Voltage
Q_g
Gate Charge Total (4.5 V)
Q_gd
Gate Charge Gate-to-Drain
R_DS(on) Drain-to-Source On-Resistance
V_GS(th) Threshold Voltage
TYPICAL VALUE
30
5.4
1.2
V_GS = 4.5 V
V_GS = 10 V
1.5
11.6
8.4
UNIT
V
nC
nC
mΩ
mΩ
V
Device
CSD17579Q5A
CSD17579Q5AT
.
Ordering Information⁽¹⁾
Media
Qty
Package
13-Inch Reel 2500 _{SON 5 x 6 mm}
7-Inch Reel 250 ^{Plastic Package}
Ship
Tape and
Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
3 Description
This 30 V, 8.4 mΩ, SON 5 mm x 6mm NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
D
G4
5D
P0093-01
.
.
Absolute Maximum Ratings
T_A = 25°C
V_DS Drain-to-Source Voltage
V_GS Gate-to-Source Voltage
Continuous Drain Current (Package limited)
VALUE
30
±20
25
UNIT
V
V
I_D
Continuous Drain Current (Silicon limited),
T_C = 25°C
46
A
Continuous Drain Current⁽¹⁾
14
I_DM Pulsed Drain Current⁽²⁾
Power Dissipation⁽¹⁾
P_D
Power Dissipation, T_C = 25°C
105
A
3.1
W
36
T_J, Operating Junction and
T_stg Storage Temperature Range
–55 to 150 °C
E_AS
Avalanche Energy, single pulse
I_D = 17 A, L = 0.1 mH
14.5
mJ
(1) Typical R_θJA = 40°C/W on a 1 inch², 2 oz. Cu pad on a 0.06
inch thick FR4 PCB.
(2) Max R_θJC = 4.3 °C/W, pulse duration ≤100 μs, duty cycle ≤1%
R_DS(on) vs V_GS
28
T_C = 25°C, I _D = 8 A
24
T_C = 125°C, I _D = 8 A
20
16
12
8
4
0
0 2 4 6 8 10 12 14 16 18 20
V_GS - Gate-to-Source Voltage (V)
D007
1
Gate Charge
10
9
I_D = 8 A
V_DS = 15 V
8
7
6
5
4
3
2
1
0
0 1.5 3 4.5 6 7.5 9
Q_g - Gate Charge (nC)
10.5
12
D004
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.