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CSD17559Q5 Datasheet, PDF (1/10 Pages) Texas Instruments – 30V N-Channel NexFET Power MOSFETs
CSD17559Q5
www.ti.com
SLPS374 – NOVEMBER 2012
30V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17559Q5
FEATURES
1
•2 Extremely Low Resistance
• Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
• Synchronous Rectification
• Active ORing and Hotswap Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in synchronous rectification and
other power conversion applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
PRODUCT SUMMARY
TA = 25°C unless otherwise stated
VDS
Drain to Source Voltage
Qg
Gate Charge Total (4.5V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain to Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
30
39
9.3
VGS = 4.5V
VGS = 10V
1.4
1.15
0.95
UNIT
V
nC
nC
mΩ
mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD17559Q5
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
VDS Drain to Source Voltage
30
VGS Gate to Source Voltage
±20
Continuous Drain Current (Package limited),
TC = 25°C
100
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
257
Continuous Drain Current(1)
40
IDM Pulsed Drain Current, TA = 25°C(1)(2)
250
PD
Power Dissipation(1)
3.2
TJ, Operating Junction and Storage
TSTG Temperature Range
–55 to 150
EAS
Avalanche Energy, single pulse
ID = 104A, L = 0.1mH, RG = 25Ω
541
UNIT
V
V
A
A
A
W
°C
mJ
(1) Typical RθJA = 40°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-
mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
P0093-01
SPACE
SPACE
RDS(on) vs VGS
GATE CHARGE
6
10
TC = 25°C Id = 40A
ID = 40A
5
TC = 125ºC Id = 40A
VDS =15V
8
4
6
3
4
2
1
2
0
0
2
4
6
8
10
12
VGS - Gate-to- Source Voltage (V)
G001
0
0 10 20 30 40 50 60 70 80 90
Qg - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated
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