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CSD17552Q5A Datasheet, PDF (1/11 Pages) Texas Instruments – 30-V, N-Channel NexFET Power MOSFETs
CSD17552Q5A
www.ti.com
30-V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17552Q5A
SLPS428 – NOVEMBER 2012
FEATURES
1
• Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point of load Synchronous Buck in
Networking, Telecom and Computing Systems
• Optimized for Control FET Applications
DESCRIPTION
The NexFET power MOSFET has been designed to
minimize losses in power conversion applications.
Figure 1. Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
RDS(on) vs VGS
18
TC = 25°C Id = 15A
16
TC = 125ºC Id = 15A
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
VDS
Qg
Qgd
RDS(on)
VGS(th)
PRODUCT SUMMARY
Drain to Source Voltage
30
Gate Charge Total (4.5V)
9.0
Gate Charge Gate to Drain
2.0
Drain to Source On Resistance
Threshold Voltage
VGS = 4.5V
VGS = 10V
1.5
V
nC
nC
6.1 mΩ
5.1 mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD17552Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Continuous Drain Current, TC = 25°C
ID
Continuous Drain Current, Silicon Limitted
Continuous Drain Current, TA = 25°C(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, single pulse
ID = 30A, L = 0.1mH, RG = 25Ω
VALUE
30
±20
60
88
17
106
3.0
UNIT
V
V
A
A
A
A
W
–55 to 150 °C
45
mJ
(1) Typical RθJA = 40°C/W on a 1-inch2 (6.45-cm2),
2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick
FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
GATE CHARGE
10
ID = 15A
VDS =15V
8
6
4
2
0
0
4
8
12
16
20
Qg - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012, Texas Instruments Incorporated