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CSD17510Q5A_10 Datasheet, PDF (1/10 Pages) Texas Instruments – 30V, N-Channel NexFET™ Power MOSFETs
CSD17510Q5A
www.ti.com
SLPS271B – JULY 2010 – REVISED SEPTEMBER 2010
30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17510Q5A
FEATURES
1
•2 Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
• Optimized for Control and Synchronous FET
Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
G4
30
25
20
6D
D
5D
P0093-01
Text 4 Spacing
RDS(on) vs VGS
ID = 20A
15
TC = 25°C
TC = 125°C
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-to-Source Voltage - V
G006
VDS
Qg
Qgd
RDS(on)
VGS(th)
PRODUCT SUMMARY
Drain to Source Voltage
30
Gate Charge Total (4.5V)
6.4
Gate Charge Gate to Drain
1.9
Drain to Source On Resistance
Threshold Voltage
VGS = 4.5V
VGS = 10V
1.5
V
nC
nC
5.4 mΩ
4.1 mΩ
V
Text Added For Spacing
ORDERING INFORMATION
Device
Package
Media Qty
CSD17510Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
Text Added For Spacing
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE UNIT
VDS Drain to Source Voltage
30
V
VGS Gate to Source Voltage
20 / –12
V
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
100
A
20
A
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
129
A
3
W
TJ, Operating Junction and Storage
TSTG Temperature Range
–55 to 150 °C
EAS
Avalanche Energy, single pulse
ID = 54A, L = 0.1mH, RG = 25Ω
45
mJ
(1) Typical RqJA = 41°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2%
Text 4 Spacing
GATE CHARGE
20
18 ID = 20A
VDS = 15V
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
Qg - Gate Charge - nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated
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