CSD17381F4 Datasheet, PDF (1/11 Pages) Texas Instruments – 30-V, N-Channel NexFET™ Power MOSFETs

CSD17381F4
www.ti.com
SLPS411A – APRIL 2013 – REVISED JULY 2013
30-V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17381F4
FEATURES
1
•2 Ultra Low On Resistance
• Ultra Low Q_g and Q_gd
• Low Threshold Voltage
• Ultra Small Footprint (0402 Case Size)
– 1.0 mm x 0.6 mm
• Ultra Low Profile
– 0.35 mm Height
• Integrated ESD Protection Diode
– Rated > 4kV HBM
– Rated > 2kV CDM
• Pb and Halogen Free
• RoHS Compliant
PRODUCT SUMMARY
V_DS
Drain to Source Voltage
30
V
Q_g
Gate Charge Total (4.5V)
1040
pC
Q_gd
Gate Charge Gate to Drain
133
pC
V_GS = 1.8V
160
R_DS(on) Drain to Source On Resistance V_GS = 2.5V
110 mΩ
V_GS = 4.5V
90
V_GS(th) Threshold Voltage
0.85
V
Text Added For Spacing
ORDERING INFORMATION
Device
Qty Media
Package
CSD17381F4 3,000
CSD17381F4R 18,000
7-Inch
Reel
13-Inch
Reel
Femto(0402) 1.0mm x
0.6mm SMD Lead Less
Ship
Tape and
Reel
APPLICATIONS
• Optimized for Load Switch Applications
• Optimized for General Purpose Switching
Applications
• Single Cell Battery Applications
• Handheld and Mobile Applications
DESCRIPTION
The FemtoFET™ MOSFET technology has been
designed and optimized to minimize the footprint in
many handheld and mobile applications. This
technology is capable of replacing standard small
signal MOSFETs while providing at least a 60%
reduction in footprint size.
160
150
140
130
120
110
100
90
80
70
60
0
On Resistance vs. Gate Voltage
T_C = 25°C Id = 0.5A
T_C = 125ºC Id = 0.5A
2
4
6
8
10
12
V_GS - Gate-to- Source Voltage (V)
G001
Text Added For Spacing
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_A = 25°C⁽¹⁾
I_DM
Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
ESD ^{Human Body Model (HBM)}
Rating _{Charged Device Model (CDM)}
VALUE
30
12
3.1
10
500
4
2
UNIT
V
V
A
A
mW
kV
kV
T_J,
Operating Junction and Storage
T_STG Temperature Range
–55 to 150 °C
E_AS
Avalanche Energy, single pulse I_D = 7.4A,
L = 0.1mH, R_G = 25Ω
2.7
mJ
(1) Typical R_θJA = 90°C/W on 1-inch² (6.45-cm²), 2-oz. (0.071-
mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
Top View
D
GS
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
FemtoFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated