CSD17313Q2_1010 Datasheet, PDF (1/9 Pages) Texas Instruments – 30V N-Channel NexFET™ Power MOSFET

CSD17313Q2
www.ti.com
SLPS260B – MARCH 2010 – REVISED OCTOBER 2010
30V N-Channel NexFET™ Power MOSFET
FEATURES
1
• Optimized for 5V Gate Drive
• Ultra Low Q_g and Q_gd
• Low Thermal Resistance
• Pb Free
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
APPLICATIONS
• DC-DC Converters
• Battery and Load Management Applications
DESCRIPTION
The NexFET power MOSFET has been designed to
minimize losses in power conversion applications and
optimized for 5V gate drive applications. The 2-mm ×
2-mm SON offers excellent thermal performance for
the size of the package.
Top View
D1
D
D2
6D
5D
V_DS
Q_g
Q_gd
R_DS(on)
V_GS(th)
PRODUCT SUMMARY
Drain to Source Voltage
30
Gate Charge Total (4.5V)
2.1
Gate Charge Gate to Drain
0.4
Drain to Source On Resistance
Threshold Voltage
V_GS = 3V
V_GS = 4.5V
V_GS = 8V
1.3
V
nC
nC
31 mΩ
26 mΩ
24 mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD17313Q2
SON 2-mm × 2-mm
Plastic Package
13-Inch
Reel
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS
Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM
Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation
T_J,
T_STG
Operating Junction and Storage
Temperature Range
E_AS
Avalanche Energy, Single Pulse,
I_D = 19A, L = 0.1mH, R_G = 25Ω
VALUE
30
+10 / –8
5
5
20
2.3
–55 to 150
18
(1) Package Limited
(2) Pulse duration ≤300ms, duty cycle ≤2%
UNIT
V
V
A
A
A
W
°C
mJ
G3
S
4S
P0108-01
Text For Spacing
R_DS(on) vs V_GS
80
70
I_D = 4A
60
50
T_C = 125°C
40
30
20
T_C = 25°C
10
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage - V
G006
8
I_D = 4A
7 _{VDS = 15V}
6
Text For Spacing
GATE CHARGE
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Q_g - Gate Charge - nC
G003
1
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Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated