CSD17310Q5A Datasheet, PDF (1/10 Pages) Texas Instruments – 30V, N-Channel NexFET™ Power MOSFETs

CSD17310Q5A
www.ti.com
30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17310Q5A
SLPS255 – FEBRUARY 2010
FEATURES
1
•2 Optimized for 5V Gate Drive
• Ultralow Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Notebook Point of Load
• Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications,
and optimized for 5V gate drive applications.
Top View
S1
8D
S2
7D
S3
6D
D
G4
5D
P0093-01
Text 4 Spacing
R_DS(on) vs V_GS
16
ID = 20A
14
12
10
TC = 125°C
8
6
4
2
TC = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage - V
G006
V_DS
Q_g
Q_gd
R_DS(on)
V_GS(th)
PRODUCT SUMMARY
Drain to Source Voltage
30
Gate Charge Total (4.5V)
8.9
Gate Charge Gate to Drain
2.1
Drain to Source On Resistance
Threshold Voltage
V_GS = 3V
V_GS = 4.5V
V_GS = 8V
1.3
V
nC
nC
5.7 mΩ
4.5 mΩ
3.9 mΩ
V
Text and br Added for Spacing
Text and br Added for Spacing
ORDERING INFORMATION
Device
Package
Media Qty
CSD17310Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
Text and br Added for Spacing
Text and br Added for Spacing
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 58A, L = 0.1mH, R_G = 25Ω
VALUE
30
+10 / –8
100
21
134
3.1
–55 to 150
168
UNIT
V
V
A
A
A
W
°C
mJ
(1) R_qJA = 40°C/W on 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick)
Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2%
Text 4 Spacing
GATE CHARGE
8
7
ID = 20A
VDS = 15V
6
5
4
3
2
1
0
0
2
4
6
8 10 12 14 16
Qg - Gate Charge - nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated