CSD17305Q5A Datasheet, PDF (1/10 Pages) Texas Instruments – 30V, N-Channel NexFET™ Power MOSFETs

CSD17305Q5A
www.ti.com
30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17305Q5A
SLPS254 – FEBRUARY 2010
FEATURES
1
•2 Optimized for 5V Gate Drive
• Ultralow Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Notebook Point of Load
• Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications,
and optimized for 5V gate drive applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0093-01
PRODUCT SUMMARY
V_DS
Drain to Source Voltage
30
V
Q_g
Gate Charge Total (4.5V)
14.1
nC
Q_gd
Gate Charge Gate to Drain
3
nC
V_GS = 3V
3.9 mΩ
R_DS(on) Drain to Source On Resistance V_GS = 4.5V
2.8 mΩ
V_GS = 8V
2.4 mΩ
V_GS(th) Threshold Voltage
1.1
V
Text and br Added for Spacing
ORDERING INFORMATION
Device
Package
Media Qty
CSD17305Q5A
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
Text and br Added for Spacing
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 78A, L = 0.1mH, R_G = 25Ω
VALUE
30
+10 / –8
100
29
181
3.1
UNIT
V
V
A
A
A
W
–55 to 150 °C
304
mJ
(1) Typical R_qJA = 40°C/W on a 1-inch² (6.45-cm²),
2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick
FR4 PCB.
(2) Pulse duration ≤300ms, duty cycle ≤2%
R_DS(on) vs V_GS
10
9
ID = 30A
8
7
6
TC = 125°C
5
4
3
2 _{TC = 25°C}
1
0
012345678
VGS - Gate-to-Source Voltage - V
9 10
G006
GATE CHARGE
8
ID = 30A
7 _{VDS = 15V}
6
5
4
3
2
1
0
0
5
10
15
20
Qg - Gate Charge - nC
25
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated