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CSD16556Q5B Datasheet, PDF (1/12 Pages) Texas Instruments – 25-V N-Channel NexFET Power MOSFETs
CSD16556Q5B
www.ti.com
SLPS432B – NOVEMBER 2012 – REVISED JANUARY 2013
25-V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16556Q5B
FEATURES
1
•2 Extremely Low Resistance
• Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in
Networking, Telecom, and Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in synchronous rectification and
other power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
D
G4
5D
4
3.5
3
2.5
2
1.5
1
0.5
0
0
P0093-01
SPACE
RDS(on) vs VGS
TC = 25°C Id = 30A
TC = 125ºC Id = 30A
2
4
6
8
10
12
VGS - Gate-to- Source Voltage (V)
G001
PRODUCT SUMMARY
TA = 25°C unless otherwise stated
VDS
Drain to Source Voltage
Qg
Gate Charge Total (4.5V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain to Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
25
36
12
VGS = 4.5V
1.2
VGS = 10V
0.9
1.4
UNIT
V
nC
nC
mΩ
mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD16556Q5B
SON 5-mm × 6-mm
Plastic Package
13-Inch
Reel
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
VDS Drain to Source Voltage
25
VGS Gate to Source Voltage
±20
Continuous Drain Current (Package limited),
TC = 25°C
100
ID
Continuous Drain Current (Silicon limited),
TC = 25°C
263
Continuous Drain Current(1)
40
IDM Pulsed Drain Current, TA = 25°C(1)(2)
249
PD
Power Dissipation(1)
3.2
TJ, Operating Junction and Storage
TSTG Temperature Range
–55 to 150
EAS
Avalanche Energy, single pulse
ID = 103A, L = 0.1mH, RG = 25Ω
530
UNIT
V
V
A
A
A
W
°C
mJ
(1) Typical RθJA = 40°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-
mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
10
ID = 30A
VDS =15V
8
SPACE
GATE CHARGE
6
4
2
0
0 10 20 30 40 50 60 70 80
Qg - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2012–2013, Texas Instruments Incorporated
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