CSD16408Q5 Datasheet, PDF (1/10 Pages) Texas Instruments – N-Channel NexFET Power MOSFET

CSD16408Q5
www.ti.com
N-Channel NexFET™ Power MOSFET
SLPS228 – OCTOBER 2009
FEATURES
1
•2 Ultra Low Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm x 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
• Optimized for Control FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3
6D
D
G4
5D
P0094-01
16
14
12
10
8
6
4
2
0
0
R_DS(on) vs V_GS
I_D = 25A
T_C = 125°C
T_C = 25°C
2
4
6
8
10
V_GS − Gate to Source Voltage − V
12
G006
PRODUCT SUMMARY
V_DS
Drain to Source Voltage
Q_g
Gate Charge Total (4.5V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain to Source On Resistance
V_GS(th) Threshold Voltage
25
6.7
1.9
V_GS = 4.5V
V_GS = 10V
1.8
V
nC
nC
5.4 mΩ
3.6 mΩ
V
ORDERING INFORMATION
Device
CSD16408Q5
Package
SON 5-mm × 6-mm
Plastic Package
Media
13-Inch
Reel
Qty
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 23A, L = 0.1mH, R_G = 25Ω
VALUE
25
+16 / –12
113
22
141
3.1
–55 to 150
126
UNIT
V
V
A
A
A
W
°C
mJ
(1) Typical R_θJA = 41°C/W on 1-inch² (6.45-cm²), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
put a break here is force notes closer to the table
put a break here is force notes closer to the table
GATE CHARGE
12
I_D = 25A
10 ^VDS ^{= 12.5V}
8
6
4
2
0
0
5
10
15
20
Q_g − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated