CSD16325Q5 Datasheet, PDF (1/10 Pages) Texas Instruments – N-Channel NexFET Power MOSFETs

CSD16325Q5
www.ti.com ........................................................................................................................................... SLPS218A – AUGUST 2009 – REVISED SEPTEMBER 2009
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16325Q5
FEATURES
1
•2 Optimized for 5V Gate Drive
• Ultralow Q_g and Q_gd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0094-01
Table 1. PRODUCT SUMMARY
V_DS
Drain to Source Voltage
Q_g
Gate Charge Total (4.5V)
Q_gd
Gate Charge Gate to Drain
R_DS(on) Drain to Source On Resistance
V_GS(th) Threshold Voltage
25
18
3.5
V_GS = 3V
V_GS = 4.5V
V_GS = 8V
1.1
V
nC
nC
2.1 mΩ
1.7 mΩ
1.5 mΩ
V
ORDERING INFORMATION
Device
CSD16325Q5
Package
SON 5-mm × 6-mm
Plastic Package
Media
13-Inch
Reel
Qty
2500
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 100A, L = 0.1mH, R_G = 25Ω
VALUE
25
+10 / –8
100
33
210
3.1
–55 to 150
500
UNIT
V
V
A
A
A
W
°C
mJ
(1) R_θJA = 38°C/W on 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick)
Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
R_DS(on) vs V_GS
5
I_D = 30A
4
T_C = 125°C
3
2
1
T_C = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS − Gate to Source Voltage − V
G006
GATE CHARGE
10
9 ^ID ^{= 30A}
8 ^{VDS = 12.5V}
7
6
5
4
3
2
1
0
0
5 10 15 20 25 30 35 40
Q_g − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated