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CSD16322Q5 Datasheet, PDF (1/10 Pages) Texas Instruments – N-Channel NexFET Power MOSFET
CSD16322Q5
www.ti.com................................................................................................................................................................................................. SLPS219 – AUGUST 2009
N-Channel NexFET™ Power MOSFET
FEATURES
1
•2 Optimized for 5V Gate Drive
• Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
• Synchronous or Control FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View
S1
8D
S2
7D
S3
D
G4
6D
5D
P0094-01
PRODUCT SUMMARY
VDS
Drain to Source Voltage
Qg
Gate Charge Total (4.5V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain to Source On Resistance
VGS(th) Threshold Voltage
25
6.8
1.3
VGS = 3V
VGS = 4.5V
VGS = 8V
1.1
V
nC
nC
5.4 mΩ
4.6 mΩ
3.9 mΩ
V
Text and br Added for Spacing
ORDERING INFORMATION
Device
CSD16322Q5
Package
SON 5-mm × 6-mm
Plastic Package
Media
13-Inch
Reel
Qty
2500
Ship
Tape and
Reel
Text and br Added for Spacing
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, single pulse
ID = 50A, L = 0.1mH, RG = 25Ω
VALUE
25
+10 / –8
97
21
136
3.1
–55 to 150
125
UNIT
V
V
A
A
A
W
°C
mJ
(1) RθJA = 39°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick)
Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300µs, duty cycle ≤2%
RDS(on) vs VGS
12
11
ID = 20A
10
9
8
TC = 125°C
7
6
5
4
3
TC = 25°C
2
1
0
0 1 2 3 4 5 6 7 8 9 10
VGS − Gate to Source Voltage − V
G006
GATE CHARGE
10
9
8
7
6
5
4
3
2
1
0
0
ID = 20A
VDS = 12.5V
2
4
6
8
10
Qg − Gate Charge − nC
12
14
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
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