CSD16301Q2_11 Datasheet, PDF (1/9 Pages) Texas Instruments – N-Channel NexFET™ Power MOSFETs

CSD16301Q2
www.ti.com
SLPS235C – OCTOBER 2009 – REVISED JULY 2011
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16301Q2
FEATURES
1
•2 Ultralow Q_g and Q_gd
• Low Thermal Resistance
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
APPLICATIONS
• DC-DC Converters
• Battery and Load Management Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion and load
management applications. The SON 2x2 offers
excellent thermal performance for the size of the
package.
Figure 1. Top View
D1
D
D2
6D
5D
G3
S
4S
P0108-01
V_DS
Q_g
Q_gd
R_DS(on)
V_GS(th)
PRODUCT SUMMARY
Drain to Source Voltage
25
Gate Charge Total (–4.5V)
2
Gate Charge Gate to Drain
0.4
Drain to Source On Resistance
Threshold Voltage
V_GS = 3V
V_GS = 4.5V
V_GS = 8V
1.1
V
nC
nC
27 mΩ
23 mΩ
19 mΩ
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD16301Q2
SON 2-mm × 2-mm
Plastic Package
13-Inch
Reel
7-Inch
Reel
3000
3000
Ship
Tape and
Reel
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
T_A = 25°C unless otherwise stated
V_DS Drain to Source Voltage
V_GS Gate to Source Voltage
I_D
Continuous Drain Current, T_C = 25°C
Continuous Drain Current⁽¹⁾
I_DM Pulsed Drain Current, T_A = 25°C⁽²⁾
P_D
Power Dissipation⁽¹⁾
T_J, Operating Junction and Storage
T_STG Temperature Range
E_AS
Avalanche Energy, single pulse
I_D = 14A, L = 0.1mH, R_G = 25Ω
VALUE
25
+10 / –8
5
5
20
2.3
–55 to 150
10
(1) Packaged Limited
(2) Pulse duration 10μs, duty cycle ≤2%
UNIT
V
V
A
A
A
W
°C
mJ
R_DS(on) vs V_GS
80
70
I_D = 4A
60
50
T_C = 125°C
40
30
20
10
T_C = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
V_GS − Gate to Source Voltage − V
G006
8
7
I_D = 4A
V_DS = 12.5V
6
GATE CHARGE
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Q_g − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2011, Texas Instruments Incorporated