English
Language : 

CSD16301Q2 Datasheet, PDF (1/10 Pages) Texas Instruments – N-Channel NexFET Power MOSFETs
CSD16301Q2
www.ti.com.............................................................................................................................................................................................. SLPS235 – OCTOBER 2009
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16301Q2
FEATURES
1
•2 Ultralow Qg and Qgd
• Low Thermal Resistance
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
APPLICATIONS
• DC-DC Converters
• Battery and Load Management Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion and load
management applications. The SON 2x2 offers
excellent thermal performance for the size of the
package.
Top View
D1
D
D2
6D
5D
G3
S
4S
P0108-01
Table 1. PRODUCT SUMMARY
VDS
Drain to Source Voltage
Qg
Gate Charge Total (–4.5V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain to Source On Resistance
VGS(th) Threshold Voltage
25
2
0.4
VGS = 3V
VGS = 4.5V
VGS = 8V
1.1
V
nC
nC
27 mΩ
23 mΩ
19 mΩ
V
Text and br Added for Spacing
ORDERING INFORMATION
Device
CSD16301Q2
Package
SON 2-mm × 2-mm
Plastic Package
Media
13-Inch
Reel
Qty
3000
Ship
Tape and
Reel
Text and br Added for Spacing
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, single pulse
ID = 14A, L = 0.1mH, RG = 25Ω
VALUE
25
+10 / –8
5
5
20
2.3
–55 to 150
10
(1) Packaged Limited.
(2) Pulse duration 10μs, duty cycle ≤2%
UNIT
V
V
A
A
A
W
°C
mJ
RDS(on) vs VGS
80
70
ID = 4A
60
50
TC = 125°C
40
30
20
10
TC = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS − Gate to Source Voltage − V
G006
GATE CHARGE
8
7
ID = 4A
VDS = 12.5V
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Qg − Gate Charge − nC
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
 ▷