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CSD15571Q2 Datasheet, PDF (1/10 Pages) Texas Instruments – 20-V N-Channel NexFET Power MOSFETs
CSD15571Q2
www.ti.com
20-V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD15571Q2
SLPS435 – AUGUST 2013
FEATURES
1
•2 Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 2-mm × 2-mm Plastic Package
APPLICATIONS
• Optimized for Load Switch Applications
• Storage, Tablets, and Handheld Devices
• Optimized for Control FET Applications
• Point of Load Synchronous Buck Converters
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion and load
management applications. The SON 2x2 offers
excellent thermal performance for the size of the
package.
Top View
D1
D
D2
6D
5D
PRODUCT SUMMARY
VDS
Drain to Source Voltage
20
V
Qg
Gate Charge Total (4.5V)
2.5
nC
Qgd
Gate Charge Gate to Drain
0.66
nC
RDS(on) Drain to Source On Resistance
VGS = 4.5V
VGS = 10V
16 mΩ
12 mΩ
VGS(th) Threshold Voltage
1.45
V
ORDERING INFORMATION
Device
Package
Media Qty
CSD15571Q2
SON 2-mm × 2-mm
Plastic Package
7-Inch
Reel
3000
Ship
Tape and
Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
Continuous Drain Current (Package Limit)
ID
Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage
TSTG Temperature Range
EAS
Avalanche Energy, single pulse
ID = 19A, L = 0.1mH, RG = 25Ω
VALUE
20
±20
22
10
52
2.5
–55 to 150
18
(1) RθJA = 50 on 1in² Cu (2 oz.) on .060" thick FR4 PCB.
(2) Pulse duration 10μs, duty cycle ≤2%
UNIT
V
V
A
A
A
W
°C
mJ
30
28
26
24
22
20
18
16
14
12
10
8
0
G3
S
4S
P0108-01
RDS(on) vs VGS
TC = 25°C,I D = 5A
TC = 125°C,I D = 5A
2 4 6 8 10 12 14 16 18 20
VGS - Gate-to- Source Voltage (V)
G001
10
9
ID = 5A
VDS =10V
8
GATE CHARGE
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Qg - Gate Charge (nC)
G001
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013, Texas Instruments Incorporated
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