BUF12840 Datasheet, PDF (1/8 Pages) Texas Instruments – Programmable Gamma-Voltage Generator

BUF12840
www.ti.com
SBOS536 – OCTOBER 2010
Programmable Gamma-Voltage Generator
with Integrated Two-Bank Memory and External EEPROM
FEATURES
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•2 10-BIT RESOLUTION
• 12-CHANNEL P-GAMMA
• READS FROM EXTERNAL EEPROM
• TWO INDEPENDENT PIN-SELECTABLE
MEMORY BANKS
• RAIL-TO-RAIL OUTPUT:
– 300mV Min Swing-to-Rail (10mA)
– 200mV Min Swing-to-Rail (5mA)
• LOW SUPPLY CURRENT
• SUPPLY VOLTAGE: 9V to 20V
• DIGITAL SUPPLY: 2V to 5.5V
• TWO-WIRE INTERFACE: Supports 400kHz and
3.4MHz Operation
APPLICATIONS
• TFT-LCD REFERENCE DRIVERS
DESCRIPTION
The BUF12840 offers 12 programmable gamma
channels with external electrically erasable
programmable read-only memory (EEPROM) read
capabilities.
The BUF12840 has two separate memory banks that
allow simultaneous storage of two different gamma
curves to facilitate switching between gamma curves.
All gamma channels offer a rail-to-rail output that
typically swings to within 200mV of either supply rail
with a 5mA load. All channels are programmed using
a two-wire interface that supports standard operations
up to 400kHz and high-speed data transfers up to
3.4MHz.
The BUF12840 is manufactured using Texas
Instruments’ proprietary, state-of-the-art, high-voltage
CMOS process. This process offers very dense logic
and high supply voltage operation of up to 20V. The
BUF12840 is offered in a QFN-24 package, and is
specified from –40°C to +95°C.
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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2010, Texas Instruments Incorporated