TSF8N65C Datasheet, PDF (4/6 Pages) Thinki Semiconductor Co., Ltd. – 7.5A,650V Insulated N-Channel Type Power MOSFETs

TSF8N65C
®
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
1.2
1.1
1.0
0.9
※ Notes :
1. V_GS = 0 V
2. I_D = 250 µ A
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig 9. Maximum Safe Operating Area
10²
Operation in This Area
is Limited by R
DS(on)
10¹
10⁰
100 µs
1 ms
10 ms
DC
Fig 8. On-Resistance Variation
vs. Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V_GS = 10 V
2. I_D = 3.7 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig 10. Maximum Drain Current
vs. Case Temperature
8
6
4
10^-1
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10^-2
10⁰
10¹
10²
V_DS, Drain-Source Voltage [V]
2
0
10³
25
50
75
100
125
150
T_C' Case Temperature [^oC]
Fig 11. Transient Thermal Response Curve
10⁰
D = 0 .5
0.2
1 0 ^{-1 0.1}
0.05
0.02
0.01
1 0 ^-2
single pulse
※ N otes :
1 . Z _{θ JC}(t) = 0 .8 8 ℃ /W M a x .
2. D uty Factor, D =t₁/t₂
3 . T _JM - T _C = P _{D M} * Z _{θ JC}( t)
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, S quare W ave P ulse D uration [sec]
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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