20N50B Datasheet, PDF (4/6 Pages) Thinki Semiconductor Co., Ltd. – 20A,500V Heatsink N-Channel Type Power MOSFET

20N50B
®
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
IV_DG=^{S =2500V}μ
A
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
10²
is Limited by R
DS(on)
10 µs
100 µs
1 ms
10¹
10 ms
DC
10⁰
10^-1
10⁰
※ Notes :
1. T_C = 25 ^oC
2. T = 150 ^oC
J
3. Single Pulse
10¹
10²
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. V = 10 V
GS
2. I = 20.0 A
D
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs Temperature
25
20
15
10
5
0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs Case Temperature
10⁰
D = 0.5
1 0 ^-1
0 .2
0 .1
0 .0 5
1 0 ^-2
0 .0 2
0 .0 1
sin g le p u ls e
※ N otes :
1.
Z_θ
(t)
JC
=
0 .5 3
℃ /W
M ax.
2. D uty Factor, D = t /t
12
3 . T_JM - T _C = P _DM * Z _{θ JC}(t)
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t , S q u are W a ve P u lse D u ra tio n [se c]
1
Figure 11. Transient Thermal Response Curve
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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