RHRP3060U Datasheet, PDF (2/3 Pages) Thinki Semiconductor Co., Ltd. – 30.0 Ampere SwitchMode Ultrafast Recovery Epitaxial Diode

RHRP3060U
®
60
50
TJ =125°C
40
30
TJ =25°C
20
10
0
0.5 1.0 1.5 2.0 2.5 3.0
VF（V）
Fig1. Forward Voltage Drop vs Forward Current
12
VR=300V
10
TJ =125°C
8
6
TJ =25°C
4
2
0
100 200
400
600
800
diF/dt（A/μs）
Fig3. Reverse Recovery Current vs diF/dt
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC (°C)
Fig5. Forward current vs.Case temperature
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
200
VR=300V
160
TJ =125°C
120
80
TJ =25°C
40
0
100 200
400
600
800
diF/dt（A/μs）
Fig2. Reverse Recovery Time vs diF/dt
600
VR=300V
500
TJ =125°C
400
300
TJ =25°C
200
100
0
100 200
400
600
800
diF/dt（A/μs）
Fig4. Reverse Recovery Charge vs diF/dt
10
1
0.1
0.01
10^-3
10^-2
10^-1
1
10
Rectangular Pulse Duration (seconds)
Fig6. Transient Thermal Impedance
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