MBRF20100CTR Datasheet, PDF (2/2 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER

MBRF20100CTR
®
RATINGS AND CHARACTERISTIC CURVES
FIG.1- FORWARD CURRENT DERATING CURVE
25
20
15
Without heat sink,
Rth j-c=8.5°C/W
10
Rthj-C=3°C/W
5
RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
O
CASE TEMPERATURE, ( C)
FIG.2- MAXIMUM NON-REPETITIVE SURGE CURRENT
150
130
110
90
70
50
30
10
8.3ms Single Half Sine-Wave
-10
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.3- TYPICAL REVE RSE CHARACTERISTICS
10
FIG.4- TYPICAL FORWARD CHARACTERISTICS
100
Tj=125°C
1
10
0.1
0.01
Tj=25°C
0.001
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE, (V)
1
Tj=25°C,
PULSE WIDTH 300us,
2% Duty Cycle
0.1
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
1000
FIG.6- DC REVERSE VOLTAGE DERATING CURVE
120
100
80
100
60
10
0.1
Tj=25°C, f=1MHz
1
10
REVERSE VOLTAGE, (V)
40
Without heat hinkRthj-a : 21°C/W
20
L42xH25xW25mm_black Aluminum
finny heat sink, Rthj-a : 6°C/W
0
100
0
25
50
75
100
125
150
AMBIENT TEMPERATURE, ( ℃)
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
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