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IRF830PBF Datasheet, PDF (2/6 Pages) International Rectifier – HEXFET Power MOSFET
IRF830PBF
®
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
500
ȟ BVDSS/ Breakdown Voltage Temperature
ȟ TJ coefficient
ID = 250uA, referenced to 25 °C
-
VDS = 500V, VGS = 0V
-
IDSS Drain-Source Leakage Current
VDS = 400V, TC = 125 °C
-
Gate-Source Leakage, Forward
VGS = 30V, VDS = 0V
-
IGSS
Gate-source Leakage, Reverse
VGS = -30V, VDS = 0V
-
On Characteristics
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250uA
2.0
RDS(ON)
Static Drain-Source On-state Resis-
tance
VGS =10 V, ID = 2.65A
-
Dynamic Characteristics
Ciss
Input Capacitance
-
Coss Output Capacitance
VGS =0 V, VDS =25V, f = 1MHz
-
Crss Reverse Transfer Capacitance
-
Dynamic Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
-
VDD =250V, ID =5.0A, RG =25 ˟
-
ଖ see fig. 13.
-
(Note 4, 5)
-
-
VDS =400V, VGS =10V, ID =5.3A
-
Qgd
Gate-Drain Charge(Miller Charge)
ଖ see fig. 12.
(Note 4, 5)
-
Typ Max Units
-
-
V
0.47
-
V/°C
-
1
uA
-
10
uA
-
100
nA
-
-100
nA
-
4.0
V
1.2
1.5
˟
608
-
75
-
pF
25
-
16
42
49
108
ns
60
130
49
108
18.5
23
4
-
nC
8
-
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Test Conditions
IS
Continuous Source Current
Integral Reverse p-n Junction
ISM
Pulsed Source Current
Diode in the MOSFET
VSD
Diode Forward Voltage
IS =5.3A, VGS =0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=5.3A, VGS=0V, dIF/dt=100A/us
ଖ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 25mH, IAS =5.3A, VDD = 50V, RG = 50 ˟ , Starting TJ = 25°C
3. ISD ˺ 5.3A, di/dt ˺ 300A/us, VDD ˺ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ˺ 300us, Duty Cycle ˺ 2%
5. Essentially independent of operating temperature.
Min.
-
-
-
-
-
Typ.
-
-
-
302
1.8
Max.
5.3
21.2
1.5
-
-
Unit.
A
V
ns
uC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/6
http://www.thinkisemi.com/