YG225D2 Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 10 Ampere Insulated Tandem Polarity Fast Recovery Half Bridge Rectifiers

YG225D2 thru YG225D6
®
Pb Free Plating Product
YG225D2/YG225D4/YG225D6
Pb
10 Ampere Insulated Tandem Polarity Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit:mm
Mechanical Data
Case: Fully Isolated Molding TO-220FP
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Positive
Common Cathode
Suffix "C2"
Suffix "C4"
Suffix "C6"
Negative
Common Anode
Suffix "N2"
Suffix "N4"
Suffix "N6"
Doubler
Series Connection
Tandem Polarity Tandem Polarity
Suffix "D2"
Suffix "S2"
Suffix "D4"
Suffix "S4"
Suffix "D6"
Suffix "S6"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL _YG225D2
Maximum Recurrent Peak Reverse Voltage VRRM
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
@ 5.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
IR
Trr
CJ
R JC
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
YG225D4
400
280
400
10.0
100
1.3
5.0
100
35
65
2.2
-55 to +150
YG225D6 ^UNIT
600
V
420
V
600
V
A
A
1.7
V
uA
uA
nS
pF
o_C/W
o_C
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/