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W20NB50 Datasheet, PDF (1/6 Pages) Thinki Semiconductor Co., Ltd. – 20A,500V Heatsink N-Channel Type Power MOSFET
W20NB50
®
W20NB50
Pb
Pb Free Plating Product
20A,500V Heatsink N-Channel Type Power MOSFET
Features
■ RDS(on) (Max 0.24 Ω )@VGS=10V
■ Gate Charge (Typical 130nC)
■ Improved dv/dt Capability
■ High ruggedness
■ 100% Avalanche Tested
1. Gate {
{ 2. Drain
●
◀▲
●
●
{ 3. Source
BVDSS = 500V
RDS(ON) = 0.24 ohm
ID = 20A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-247AC pkg is well suited for
adaptor power unit and small power inverter application.
TO-247AC/TO-247ADS
3
2
1
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
500
20
12.5
80
± 30
1050
20
23.5
4.5
235
1.88
-55 to +150
300
Typ
Max
--
0.53
0.24
--
--
40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/6
http://www.thinkisemi.com/