V10P10 Datasheet, PDF (1/2 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

V10P10
®
V10P10
Pb
Pb Free Plating Product
10 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier
■ Features
TO-277/POWERDI5
● _{High surge Forward current capability}
● _{Low Power loss, High efficiency}
.075(1.90)
.067(1.70)
.161(4.10)
.154(3.90)
.014(0.35)
.010(0.25)
● IF（_AV） 10A
● _{VRRM 100V}
Dimensions in inches and (millimeters)
.045(1.15)
.041(1.05)
Mounting Pad Layout
.132(3.36)
■ Applications
● _{Switching Power Supply Industry}
● _{Photovoltaic Solar cell Protection}
Schottky Rectifier
LEFT PIN
RIGHT PIN
.039(1.00)
.031(0.80)
.075(1.90)
.071(1.80)
BOTTOM SIDE
HEAT SINK
Bottom
.055(1.40)
.072(1.84)
Note: Pins Left & Right must
be electrically connected
at the printed circuit board.
Limiting Values（Absolute Maximum Rating）
Item
Repetitive Peak Reverse Voltage
Average Rectified Output Current
Surge(Non-repetitive)Forward
Current
Current Squared Time
Storage Temperature
Junction Temperature
Thermal Resistance(Typical)
Symbol
VRRM
Io
IFSM
I2t
Tstg
Tj
Rθ_J-C
Unit
V
A
A
A2s
℃
℃
℃/W
Conditions
60HZ sine wave, R- load, Ta=25℃
60HZ sine wave, 1 cycle, Ta=25℃
1ms≤t＜8.3ms Tj=25℃
Between Junction and Case
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
V10P10
100V
10
275
313
-55 ~ +150
-55~+150
15
Item
Peak Forward Voltage
Reverse Breakdown Voltage
Leakage Current
Symbol Unit
VFM
V
VBR
V
IR
mA
Test Condition
I FM =10.0A,Tj=25℃
I FM =10.0A,Tj=125℃
IR=0.1mA
VR=100V，Tj=25℃
VR=100V，Tj=125℃
Min
Typ
Max
-
0.61
0.65
-
0.54
0.58
100
-
-
-
-
0.1
-
-
10
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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