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US5A Datasheet, PDF (1/2 Pages) Semikron International – Ultrafast silicon rectifier diodes
US5A thru US5M
®
Pb Free Plating Product
US5A thru US5M
Pb
5.0 Ampere SMD Glass Passivated Ultra Fast Recovery Rectifier Diodes
FEATURE
Glass passivated chip junction
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
MECHANICAL DATA
Case:SMC/DO-214AB Package
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode band
Mounting Position: Any
Weight: 0.22 gram approximately
APPLICATION
LED SMPS/Industrial power supply
HID ballast stabilizer
Telecommunication SMPS/LED street lamp
OUTLINE
Cathode Band
0.126 (3.20)
0.114 (2.90)
0.280 (7.11)
0.260 (6.60)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0.002(0.05)
0.320 (8.13)
0.305 (7.75)
SMC/DO-214AB
Unit:inch(millimeter)
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS US5A US5B US5D US5G US5J US5K US5M
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
VRRM
VRMS
VDC
I(AV)
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
5.0
IFSM
VF
IR
trr
CJ
RθJA
TJ,TSTG
150
1.0
1.4
1.7
10.0
300.0
50
75
15
12
15.0
-50 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
Volts
µA
ns
pF
C/W
C
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/