URF2020C Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 20.0 Ampere Dual Fullpak Insulated Package Ultra Fast Recovery Diode

URF2020C thru URF2060C
®
URF2020C thru URF2060C
Pb
Pb Free Plating Product
20.0 Ampere Dual Fullpak Insulated Package Ultra Fast Recovery Diode
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Fully molded isolation TO-220F/ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202 method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approximately
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Case
Positive
Negative
* ^Doubler
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "C"
Suffix "A"
Suffix "D"
Suffix "DR"
*^{Available for Mass Production}
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL
VRRM
VRMS
VDC
URF2020C
URF2020A
URF2020D
200
140
200
URF2040C
URF2040A
URF2040D
400
280
400
URF2060C
URF2060A ^UNIT
URF2060D
600
V
420
V
600
V
Maximum Average Forward Rectified
Current TC=125^oC
IF(AV)
20.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
200
(JEDEC method)
175
A
Maximum Instantaneous Forward Voltage
VF
0.98
@ 10.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
120
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
1.7
V
10.0
uA
250
uA
35
nS
70
pF
-55 to +150
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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