UGF1004GD Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 10 Ampere Insulated Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers

UGF1004GD thru UGF1008GD
®
UGF1004GD thru UGF1008GD
Pb
Pb Free Plating Product
10 Ampere Insulated Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with ultra fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit:mm
Mechanical Data
Case: Fully Insulated TO-220FP FullPak Plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Positive
Negative
Doubler
Series Connection
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "G"
Suffix "GA"
Suffix "GD"
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
PARAMETER
SYMBOL ^{UGF1004GD UGF1005GD UGF1006GD UGF1007GD UGF1008GD} UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 2)
I_F= 5 A
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
V_F
I_R
Trr
R_θJC
T_J
T_STG
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
200
300
400
140
210
280
200
300
400
10
70
0.95
1.25
10
100
20
6.0
- 55 to +175
- 55 to +175
500
600
350
420
500
600
1.70
25
- 55 to +150
- 55 to +150
V
V
V
A
A
V
μA
ns
o_C/W
o_C
o_C
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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http://www.thinkisemi.com/