TSF10N70C Datasheet, PDF (1/4 Pages) Thinki Semiconductor Co., Ltd. – 10A,700V Insulated N-Channel Type Power MOSFET

TSF10N70C
®
TSF10N70C
Pb
Pb Free Plating Product
10A,700V Insulated N-Channel Type Power MOSFET
Features
■ R_DS(on) (Max 1.20 Ω )@V_GS=10V
■ Gate Charge (Typical 45nC)
■ Improved dv/dt Capability
■ High ruggedness
■ 100% Avalanche Tested
1. Gate {
{ ^{2. Drain}
●
◀▲
●
●
{ _{3. Source}
BV_DSS = 700V
R_DS(ON) = 1.2 ohm
I_D = 10A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220F pkg is well suited for
adaptor power unit and small power inverter application.
TO-220F
23
1
„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
700
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
10
A
Drain Current
Continuous
ID
Pulsed (Note 2)
IDM
10
A
40
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
Repetitive (Note 2)
EAR
700
mJ
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 14.2mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
4. ISD ≤ 9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
„ THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
2.5
UNIT
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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