TSF10N60C Datasheet, PDF (1/7 Pages) Thinki Semiconductor Co., Ltd. – 10.3A,600V Insulated N-Channel Type Power MOSFET

TSF10N60C
®
TSF10N60C
Pb
Pb Free Plating Product
10.3A,600V Insulated N-Channel Type Power MOSFET
Features
■ R_DS(on) (Max 0.75 Ω )@V_GS=10V
■ Gate Charge (Typical 45nC)
■ Improved dv/dt Capability
■ High ruggedness
■ 100% Avalanche Tested
1. Gate {
{ ^{2. Drain}
●
◀▲
●
●
{ _{3. Source}
BV_DSS = 600V
R_DS(ON) = 0.75 ohm
I_D = 10.3A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220F pkg is well suited for
adaptor power unit and small power inverter application.
TO-220F
23
1
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
Drain to Source Voltage
Continuous Drain Current(@T_C = 25 °C)
Continuous Drain Current(@T_C = 100 °C)
I_DM
V_GS
E_AS
E_AR
dv/dt
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T_C = 25 °C)
P_D
Derating Factor above 25 °C
T_STG, T_J
T_L
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Value
TSP10N60C TSF10N60C
600
Units
V
10.3
10.3*
A
6.5
6.5*
A
(Note 1)
41.2
41.2*
A
±30
V
(Note 2)
822
mJ
(Note 1)
15.8
mJ
(Note 3)
5.0
V/ns
158
57
W
1.27
0.45
W/°C
- 55 ~ +150
°C
300
°C
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Maximum value
TSP10N60C TSF10N60C
0.79
2.21
62.5
62.5
Units
°C/W
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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