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SFF2004GA Datasheet, PDF (1/2 Pages) Taiwan Semiconductor Company, Ltd – Isolated Glass Passivated Super Fast Rectifier
SFF2004GA thru SFF2008GA
®
SFF2004GA thru SFF2008GA
Pb
Pb Free Plating Product
20.0 Ampere Isolated Common Anode Super Fast Rectifier Diodes
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
Mechanical Data
¬ Case: ITO-220AB Isolated/Insulated
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity: As marked on body
¬ Mounting position: Any
¬ Weight: 2.24 gram approximately
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Positive
Common Cathode
Suffix "G"
Case
Negative
Common Anode
Suffix "GA"
Case
Doubler
Tandem Polarity
Suffix "GD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL
VRRM
VRMS
SFF2004G SFF2006G SFF2008G
SFF2004GA SFF2006GA SFF2008GA UNIT
SFF2004GD SFF2006GD SFF2008GD
200
400
600
V
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
Current TC=125oC
IF(AV)
20.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
200
(JEDEC method)
175
A
Maximum Instantaneous Forward Voltage
VF
0.98
@ 10.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
120
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
1.7
V
10.0
uA
250
uA
35
nS
70
pF
-55 to +150
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
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