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SF30A60U Datasheet, PDF (1/3 Pages) Thinki Semiconductor Co., Ltd. – 30.0 Ampere SwitchMode Single Fast Recovery Epitaxial Diode
SF30A60U
®
SF30A60U
Pb
Pb Free Plating Product
30.0 Ampere SwitchMode Single Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-247-2L
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
SF30A60U using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
600
V
VRRM
Maximum Repetitive Reverse Voltage
600
V
IF(AV)
Average Forward Current
TC=110°C, Per Diode
30
A
IF(RMS) RMS Forward Current
TC=110°C, Per Diode
42
A
IFSM
Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine
300
A
PD
Power Dissipation
156
W
TJ
Junction Temperature
-40 to +150
°C
TSTG
Torque
Storage Temperature Range
Module-to-Sink
Recommended(M3)
-40 to +150
°C
1.1
N·m
RθJC
Thermal Resistance
Junction-to-Case
0.8
°C /W
Weight
6.0
g
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
IRM
Reverse Leakage Current
Test Conditions
VR=600V
VR=600V, TJ=125°C
Min. Typ. Max. Unit
--
--
15
µA
--
-- 250 µA
VF
Forward Voltage
IF=30A
IF=30A, TJ=125°C
-- 2.0 --
V
-- 1.65 --
V
trr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs
--
22
--
ns
trr
Reverse Recovery Time
VR=300V, IF=30A
IRRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
--
35
--
ns
-- 2.5 --
A
trr
Reverse Recovery Time
VR=300V, IF=30A
IRRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 110 --
ns
-- 7.0 --
A
Page 1/3
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/