SDD10N01 Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes

SDD10N01 thru SDD10N07
®
Pb Free Plating Product
SDD10N01 thru SDD10N07
Pb
10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes
Features
Latest&matured mesa technology with high reliablity
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,UPS and Motor Control
Car Audio Amplifiers and Sound Device Systems etc..
Mechanical Data
Case: Heatsink TO-220CE package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
TO-220AB
9.90±0.20
φ3.60^±0.20
4.50±0.20
Unit:mm
1.30±0.20
1.27±0.20
1.52±0.20
2.40±0.20
2.54typ
2.54typ
0.80±0.20
0.50±0.20
Case
Case
Case
Case
Positive
Negative
Doubler
Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Prefix "SDK"
Prefix "SDA"
Prefix "SDS"
Prefix "SDD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL ^{SDD SDD SDD SDD SDD SDD SDD} UNIT
10N01 10N02 10N03 10N04 10N05 10N06 10N07
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
V_RRM
V_RMS
V_DC
I_F(AV)
50 100 200 400 600 800 1000 V
35
70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
10
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
125
A
Maximum instantaneous forward voltage (Note 1)
@5A
V_F
1.1
V
Maximum reverse current @ rated V_R ^TJ=25°C
I_R
T_J=125°C
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C_J
R_θJC
T_J
T_STG
Note 2: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
5
200
30
3
- 55 to +150
- 55 to +150
μA
pF
°C/W
°C
°C
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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