S6A Datasheet, PDF (1/2 Pages) Micro Commercial Components – 6 Amp Silicon Rectifier 50 to 1000 Volts

S6A thru S6M
®
Pb Free Plating Product
S6A thru S6M
Pb
6.0 Ampere Surface Mount Glass Passivated General Purpose Rectifier
Features
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
¬ Glass passivated chip junction
Mechanical Data
¬ Case: Molded plastic SMC/DO-214AB
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-750
method 2026
¬ Polarity:Color band denotes cathode end
¬ Mounting position: Any
¬ Weight: 0.21 gram approximately
SMC/DO-214AB
Unit: inch (mm)
.280(7.11)
.260(6.60)
.012(.305)
.006(.152)
.050(1.27)
.030(0.76)
.008(.203)
.002(.051)
.320(8.13)
.305(7.75)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL S6A S6B
Maximum Recurrent Peak Reverse Voltage VRRM
50
100
Maximum RMS Voltage
VRMS
35
70
Maximum DC Blocking Voltage
VDC
50
100
Maximum Average Forward Rectified
Current TA=75^oC
I(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 6.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
Typical junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction and Storage
Temperature Range
VF
IR
CJ
R JA
TJ,TSTG
NOTES : (1) Thermal Resistance junction to ambient.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
S6D S6G S6J
200 400 600
140 280 420
200 400 600
6.0
150
1.1
10.0
250
50
20
-65 to +150
S6K S6M UNIT
800 1000 V
560 700 V
800 1000 V
A
A
V
uA
uA
pF
o_C/W
o_C
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
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