RHRP8120 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – 8A, 1200V Hyperfast Diode

RHRP8120
®
RHRP8120
Pb
Pb Free Plating Product
10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diodes
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-220AC/TO-220C-2P
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
RHRP8120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
1200
V
V RRM
Maximum Repetitive Reverse Voltage
1200
V
I F(AV)
Average Forward Current
TC=110°C
10
A
IF(RMS) RMS Forward Current
TC=110°C
15
A
I FSM
Non-Repetitive Surge Forward Current ^TJ^{=45°C, t=10ms, 50Hz, Sine}
100
A
PD
Power Dissipation
70
W
TJ
T STG
Torque
Junction Temperature
Storage Temperature Range
Module-to-Sink
Recommended（M3）
-40 to +150
°C
-40 to +150
°C
1.1
N·m
R θJC
Thermal Resistance
Junction-to-Case
Weight
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
I RM
Reverse Leakage Current
VR=1200V
VR=1200V, TJ=125°C
1.8
°C /W
2.2
g
TC=25°C unless otherwise specified
Min. Typ. Max. Unit
--
-- ^{100 µA}
--
-- ^{500 µA}
VF
Forward Voltage
I F =10A
IF=10A, TJ=125°C
-- 2.4 --
V
-- 1.85 --
V
t rr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs --
22
--
ns
t rr
Reverse Recovery Time
VR=600V, IF=10A
--
44
--
ns
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 3.5 --
A
t rr
Reverse Recovery Time
VR=600V, IF=10A
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 220 --
ns
-- 6.5 --
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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