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RHRG60120 Datasheet, PDF (1/3 Pages) Thinki Semiconductor Co., Ltd. – Inversion Welder
RHRG60120
®
RHRG60120
Pb
Pb Free Plating Product
60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
TO-247-2L
Cathode(Bottom Side Metal Heatsink)
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
Internal Configuration
Base Backside
Anode
Cathode
GENERAL DESCRIPTION
RHRG60120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
1200
V
V RRM
Maximum Repetitive Reverse Voltage
1200
V
I F(AV)
Average Forward Current
TC=110°C
60
A
IF(RMS) RMS Forward Current
TC=110°C
84
A
I FSM
Non-Repetitive Surge Forward Current TJ=45°C, t=10ms, 50Hz, Sine
500
A
PD
Power Dissipation
312
W
TJ
Junction Temperature
-40 to +150
°C
T STG
Storage Temperature Range
-40 to +150
°C
Torque Module-to-Sink
Recommended(M3)
1.1
N·m
R θJC
Thermal Resistance
Weight
ELECTRICAL CHARACTERISTICS
Junction-to-Case
0.4
°C /W
6.0
g
TC=25°C unless otherwise specified
Symbol
Parameter
I RM
Reverse Leakage Current
Test Conditions
VR=1200V
VR=1200V, TJ=125°C
Min. Typ. Max. Unit
--
-- 500 µA
--
--
5
mA
VF
Forward Voltage
I F =60A
IF=60A, TJ=125°C
-- 2.10 --
V
-- 1.75
V
t rr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs --
40
--
ns
t rr
Reverse Recovery Time
VR=600V, IF=60A
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
--
90
--
ns
-- 7.5 --
A
t rr
Reverse Recovery Time
VR=600V, IF=60A
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 320 --
ns
--
14
--
A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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