NTE6240 Datasheet, PDF (1/2 Pages) NTE Electronics – Silicon Rectifier Super Fast, Dual, Center Tap

NTE6240/NTE6244
®
NTE6240/NTE6244
Pb
Pb Free Plating Product
16 Ampere Heatsink Package Dual Ultra Fast Recovery Half Bridge Rectifier
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
TO-220AB
9.90±0.20
φ3.60^±0.20
4.50±0.20
Unit:mm
1.30±0.20
1.27±0.20
1.52±0.20
2.40±0.20
Mechanical Data
Case: Heatsink TO-220AB outline
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
2.54typ
2.54typ
0.80±0.20
0.50±0.20
Case
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Suffix "6240" Suffix "6244"
* * ^Doubler
Reverse Doubler
Tandem Polarity Tandem Polarity
*^{Available for Mass Production}
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Working Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Total Device,(Rated VR), Tc = 150°C
Maximum Peak Rectified Forward Current
(Rated VR, Square Wave, 20 kHz) Tc = 150°C
Maximum Non-repetitive Peak Forward Surge Current
(Halfwave, single phase, 60 Hz) Per Leg
Maximum Forward Voltage at IF = 8 A, Tc = 25°C
Maximum Instantaneous Reverse Current ⁽¹⁾
( Rated dc Voltage)
Maximum Reverse Recovery Time
(IF = 0.5A, IR = 1A ; Irr = 0.25 A)
Maximum Thermal Resistance, Junction to Case
Junction Temperature Range
Storage Temperature Range
Note :
(1) Pulse Test : Pulse Width = 300 µs Duty Cycle ≤ 2 0%
SYMBOL
VRRM
VRWM
VDC
IF(AV)
NTE6240/NTE6244
200
200
200
8.0 (Per Leg )
16 (Total Device)
IFRM
16
UNIT
V
V
V
A
A
IFSM
VF
IR
IR(H)
Trr
RθJC
TJ
TSTG
100
0.975⁽¹⁾
5 (Tc = 25°C)
250 (Tc = 150°C)
25~35
3.0
- 65 to + 175
- 65 to + 175
A
V
µA
µA
ns
°C/W
°C
°C
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/