NFR12C60A Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 12.0 Ampere Negative Polarity Common Anode Fast Recovery Rectifier

NFR12C20A thru NFR12C60A
®
NFR12C20A thru NFR12C60A
Pb
Pb Free Plating Product
12.0 Ampere Negative Polarity Common Anode Fast Recovery Rectifier
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
Mechanical Data
¬ Case:ITO-220AB Isolated/Insulated
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:As marked on diode body
¬ Mounting position: Any
¬ Weight: 2.2 gram approximately
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Doubler
Suffix "C"
Suffix "A"
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100^oC
VRRM
VRMS
VDC
IF(AV)
NFR12C20C
NFR12C20A
NFR12C20D
200
140
200
NFR12C40C
NFR12C40A
NFR12C40D
400
280
400
12.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
100
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
@ 6.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
10.0
250
35
65
2.2
-55 to +150
NFR12C60C
NFR12C60A
NFR12C60D
600
420
600
UNIT
V
V
V
A
A
1.7
V
uA
uA
nS
pF
o_CW
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
© 2006 Thinki Semiconductor Co.,Ltd.
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