English
Language : 

NFR12C20D Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 12.0 Ampere Insulated Package Doubler Polarity Fast Recovery Rectifier
NFR12C20D thru NFR12C60D
®
NFR12C20D thru NFR12C60D
Pb
Pb Free Plating Product
12.0 Ampere Insulated Package Doubler Polarity Fast Recovery Rectifier
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
Mechanical Data
¬ Case:ITO-220AB Isolated/Insulated
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:As marked on diode body
¬ Mounting position: Any
¬ Weight: 2.2 gram approximately
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Doubler
Suffix "C"
Suffix "A"
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
VRRM
VRMS
VDC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 6.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
VF
IR
Trr
CJ
R JC
TJ, TSTG
NFR12C20C
NFR12C20A
NFR12C20D
200
140
200
0.98
NFR12C40C
NFR12C40A
NFR12C40D
400
280
400
12.0
100
1.3
10.0
250
35
65
2.2
-55 to +150
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
NFR12C60C
NFR12C60A
NFR12C60D
600
420
600
UNIT
V
V
V
A
A
1.7
V
uA
uA
nS
pF
oCW
oC
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/