MURF3020PTD Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes

MURF3020PTD thru MURF3060PTD
®
MURF3020PTD thru MURF3060PTD
Pb
Pb Free Plating Product
30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
260^oC, 0.16”(4.06mm)from case for 10 seconds
Mechanical Data
Cases: Insulated/Isolated TO-3P(H)IS
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 gram approximately
TO-3P(H)IS
.378
(9.6)
.610 (15.5)
.217 (5.5)
.177
(4.5)
.965
(24.5)
.720
(18.3)
Min
.177
(4.5)
Unit: inch (mm)
.130 (3.3)
.215 (5.47)
.138 (3.5)
Positive
Common Cathode
Suffix "PT"
Negative
Common Anode
Suffix "PTA"
Doubler
Tandem Polarity
Suffix "PTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
MURF3020PT MURF3040PT MURF3060PT
SYMBOL _{MURF3020PTA MURF3040PTA MURF3060PTA} UNIT
MURF3020PTD MURF3040PTD MURF3060PTD
VRRM
200
400
600
V
VRMS
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
Current TC=125^oC
IF(AV)
30.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
300
A
Maximum Instantaneous Forward Voltage
VF
0.98
1.3
@ 15.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
10
500
Maximum Reverse Recovery Time (Note 1) Trr
35
Typical junction Capacitance (Note 2)
CJ
150
1.7
V
uA
uA
nS
pF
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to +150
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1.0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.04
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/