MURF3020CT Datasheet, PDF (1/2 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – ULTRAFAST PLASTIC RECTIFIER

MURF3020CT thru MURF3060CT
®
Pb Free Plating Product
MURF3020CT/MURF3040CT/MURF3060CT
Pb
30 Ampere Insulated Common Cathode Fast Recovery Half Bridge Rectifiers
Features
Latest P/G technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Fully Isolated Molding TO-220FP
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
ITO-220AB
Unit:mm
Case
Case
Case
Case
Positive
Negative
Doubler
Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CT"
Suffix "CTA"
Suffix "CTD"
Suffix "CTS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL _{MURF3020CT MURF3040CT MURF3060CT} UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125^oC
VRRM
VRMS
VDC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
@ 15.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Operating Junction and Storage
Temperature Range
TJ, TSTG
200
140
200
0.98
400
280
400
30.0
300
1.3
10
100
35-60
150
-55 to +150
600
V
420
V
600
V
A
A
1.7
V
uA
uA
nS
pF
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1.0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.05
Page 1/2
© 2006 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com/